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40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
-55 %
40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba
    ₹158
    ₹350


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    40QR21 / Discrete Igbts Silicon N-Channel Igbt Toshiba

     

    Type Designator: GT40QR21

    Marking Code: 40QR21

    Type of IGBT Channel: N

    Maximum Power Dissipation (Pc), W: 230

    Maximum Collector-Emitter Voltage |Vce|, V: 1200

    Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

    Maximum Gate-Emitter Voltage |Veg|, V: 25

    Maximum Collector Current |Ic|, A: 40

    Maximum Junction Temperature (Tj), °C: 175

    Rise Time, nS: 120

    Package: TO3P

    Package Include:

    1 x 40QR21 Silicon N-Channel IGBT

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